Talk on "Quantum photonics incorporating color centers in silicon carbide and diamond"

02.05.2019 16:00 - 17:00

by Marina Radulaski; University of California, Davis


Exciting systems for quantum communication and quantum simulation have been proposed for nanophotonic devices integrating quantum emitters. The color centers in wide band gap semiconductors are especially promising quantum emitters for implementation of these proposals due to a favorable combination of optical and spin properties. The integration of color centers with nanophotonic devices requires advanced material processing to simultaneously maintain the pristine crystalline environment of the emitter and achieve low optical loss at the walls of the structure. Combining traditional and inversely designed photonic modeling, novel fabrication methods, and confocal spectroscopy, we have developed a variety of quantum optical platforms in silicon carbide, diamond and hybrid substrates suitable for scalable quantum photonics and spintronics.


Host: M. Aspelmeyer

Seminarroom 3, 3rd Floor, Boltzmanngasse 5, 1090 Vienna